GT30N135SRA,S1E
Toshiba Semiconductor and Storage
Deutsch
Artikelnummer: | GT30N135SRA,S1E |
---|---|
Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
Teil der Beschreibung.: | D-IGBT TO-247 VCES=1350V IC=30A |
Datenblätte: | None |
RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $3.77 |
10+ | $3.383 |
25+ | $3.198 |
100+ | $2.7717 |
250+ | $2.6296 |
500+ | $2.3595 |
1000+ | $1.99 |
2500+ | $1.8905 |
5000+ | $1.8354 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Kollektor-Emitter-Durchbruch (max) | 1350 V |
VCE (on) (Max) @ Vge, Ic | 2.6V @ 15V, 60A |
Testbedingung | 300V, 60A, 39Ohm, 15V |
Td (ein / aus) bei 25 ° C | - |
Schaltenergie | -, 1.3mJ (off) |
Supplier Device-Gehäuse | TO-247 |
Serie | - |
Leistung - max | 348 W |
Verpackung / Gehäuse | TO-247-3 |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Tube |
Betriebstemperatur | 175°C (TJ) |
Befestigungsart | Through Hole |
Eingabetyp | Standard |
IGBT-Typ | - |
Gate-Ladung | 270 nC |
Strom - Collector Pulsed (Icm) | 120 A |
Strom - Kollektor (Ic) (max) | 60 A |
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![]() GT30N135SRA,S1EToshiba Semiconductor and Storage |
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